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H5N2510DL, H5N2510DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005
Features
* Low on-resistance * Low drive current * High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4 D 4 1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
G 1 2
3 S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 4
H5N2510DL, H5N2510DS
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 250 20 5 20 5 20 25 5 150 -55 to +150
Unit V V A A A A W C/W C C
IDR (pulse) Note 2 Pch ch-c Tch Tstg
Note 1
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 3. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Qrr Min 250 -- -- 1.0 -- -- 3.2 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.68 0.72 5.3 365 42 12 15.8 1.2 5.4 15 18.5 65 10 1.0 91 430 Max -- 0.1 1 2.5 0.89 0.97 -- -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF nC nC nC ns ns ns ns V ns nC Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 3 ID = 2.5 A, VGS = 10 V ID = 2.5 A, VGS = 10 V Note 3 ID = 2.5 A, VDS = 4 V VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V VGS = 10 V ID = 5 A ID = 2.5 A VGS = 10 V RL = 50 Rg = 10 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0 diF/dt = 100 A/s
Note 3
Rev.2.00 Sep 07, 2005 page 2 of 4
H5N2510DL, H5N2510DS
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-B
Package Name DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
4.7 0.5
16.2 0.5
3.1 0.5
1.15 0.1 0.8 0.1 (0.7)
5.5 0.5
1.2 0.3
0.55 0.1 2.29 0.5 2.29 0.5
0.55 0.1
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.2.00 Sep 07, 2005 page 3 of 4
(5.1)
H5N2510DL, H5N2510DS
Ordering Information
Part Name H5N2510DL-E H5N2510DSTL-E 3200 pcs 3000 pcs Quantity Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 4 of 4
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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